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Модулятор IQ

Основная функция IQ-модулятора заключается в переносе комплексных электрических сигналов (каналы I и Q) на оптическую несущую, что позволяет достичь высокоспектральной эффективности передачи.

Specification

Resources

The 20 GHz X 2 lithium niobate IQ modulator is based on a dual Mach-Zehnder electro-optic modulator (MZM) design with a dual parallel structure. The electro-optic bandwidth of each modulator is greater than 20 GHz, and the addition of an integrated photodiode provides automatic bias control (ABC).

Main Characteristics

• Titanium diffusion process

• The working wavelength is 1530-1570 nm

• Operating bandwidth > 20 GHz

• Low optical insertion loss

• Integrated photodiode

• Meet Telcordia GR-468-Core communication specification

Application

• OFDM modulation

• QPSK modulation

• QAM modulation

• CS-SSB

• FMCW Autopilot Lidar

Absolute Maximum Rating

Parameter	Condition	Minimum value	Maximum value	Unit
Maximum RF input power (electrical)	RF port AC-coupled AC	-	10	Vpk-pk
Maximum input optical power (optical)	Continuous power CW	-	100	mW
DC Voltage at DC port	-	- 40	40	V
MPD reverse current	-	-	< 2	mA
MPD forward current	-	-	< 10	mA
MPD reverse voltage	-	-	< 15	V
Enclosure operating temperature	-	- 5	+ 75	°C
Rate of change of maximum operating temperature	-	-	5	°C/min
Storage temperature	-	-	+ 85	°C
Operating humidity	Non-condensing	5	85	%
Pin Soldering Temperature	-	-	250	°C
Maximum lead bonding time	-	-	10	s

Technical parameters

Parameter	Condition (1)	Minimum value	Typical value	Maximum value	Unit
Optical parameters
Operating wavelength range	-	1525	-	1570	nm
Insertion Loss, IL (2)	EOL, -5 ~ + 75 ℃, full C-band	-	5.0	7.0	dB
Phase-MZI extinction ratio	@ DC	24	-	-	dB
Extinction ratio of RF-MZI	@ DC	24	29		dB
Polarization extinction ratio PER	-	20	-	-	dB
Return Loss, RL	Input and output	40	-	-	dB
RF Interface-Electrical Parameters
Sub-MZI Vπ	@ 1 kHz	-	5.0	7.0	V
Carrier suppression ratio ⁽³⁾	@ 15 GHz	To be determined	-	-	dB
Sideband suppression ratio	@ 15 GHz	To be determined	-	-	dB
Sub-MZI-3 dB electro-optic bandwidth	Relative to 2 GHz	20	23	-	GHz
Sub-MZI S21 Flatness	300 MHz - 20 GHz	- 1	-	1	dB
Sub-MZI Amplitude Difference (S21)	-	- 1	-	1	dB
Sub-MZI delay	-	- 5	-	5	ps
RF-MZI return loss S11	40 MHz - 17 GHz 17 GHz - 30 GHz	10 8	12 10	- -	dB

Parameter	Condition ¹	Minimum value	Typical value	Maximum value	Unit
Bias Interface-Electrical Parameters *(4)*
Sub-MZI bias voltage Vπ	@ 1 kHz	-	7	8	V
Mother MZI bias voltage Vπ	@ 1 kHz	-	7	8	V
Variation of all MZI bias voltages Vπ in the full operating band	At 1550 nm	- 5	-	5	%
Bias interface impedance	@ DC	1	-	-	MΩ
MPD parameter (5))
PD Responsiveness ⁽⁶⁾	-	20	-	120	mA/W
The linearity	-	-10	-	10	%
Phase deviation (7)(8)	The PD is not reversed	-5	-	5	Degree

(1) Top = 25 C, BOL, wavelength 1550 nm, unless specifically marked

(2) The insertion loss is measured at the highest point of transfer function of MZI

(3) Test method TBD

(4) Each bias port includes two pins, a differential voltage input,

(5) Total input mPD

(6) The mPD responsivity is defined as:

· Sub-MZI is set at the maximum output point

· Bias voltage is applied to the mother MZI

· Responsivity R = (Im _ -3 dB)/ (Pout _ -3 dB)

· Im _ -3 dB is the current of the mPD when the optical output is at the maximum point of -3 dB

· Pout _ -3 dB is the optical power when the optical output is at the maximum point of -3 dB

(7) The mPD phase difference is the difference between the mPD and the maximum or minimum of the output optical power

(8) ± 5 ° of mPD phase difference is equivalent to ± 2.8%

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Resources

Модулятор IQ